RQ3E100MNTB1 - MOSFET N-CH 30V 10A HSMT8

Vervaardiger Deel nommer

RQ3E100MNTB1

Interne Deel nommer

ABC-RQ3E100MNTB1

vervaardiger

Rohm Semiconductor

Kort beskrywing

MOSFET N-CH 30V 10A HSMT8

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1558676 Pieces

verwysingsprys

~~USD 0.21~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het RQ3E100MNTB1 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir RQ3E100MNTB1

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : RQ3E100MNTB1

vervaardiger : Rohm Semiconductor

beskrywing : MOSFET N-CH 30V 10A HSMT8

reeks : -

Deelstatus : Not For New Designs

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 30V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 10A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 12.3 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 9.9nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 520pF @ 15V

VOO-funksie : -

Kragdissipasie (maksimum) : 2W (Ta)

Werkstemperatuur : 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 8-HSMT (3.2x3)

Pakket / saak : 8-PowerVDFN

gewig : -

toestand : Nuut en oorspronklik

dokumente vir RQ3E100MNTB1

Inligtingsblaaie : RQ3E100MNTB1.pdf

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