IPI037N08N3GHKSA1 - MOSFET N-CH 80V 100A TO262-3

Vervaardiger Deel nommer

IPI037N08N3GHKSA1

Interne Deel nommer

ABC-IPI037N08N3GHKSA1

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET N-CH 80V 100A TO262-3

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

33504 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het IPI037N08N3GHKSA1 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir IPI037N08N3GHKSA1

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : IPI037N08N3GHKSA1

vervaardiger : Infineon Technologies

beskrywing : MOSFET N-CH 80V 100A TO262-3

reeks : OptiMOS™

Deelstatus : Obsolete

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 80V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 100A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 3.75 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 155µA

Heklading (Vg) (Maks) @ Vgs : 117nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 8110pF @ 40V

VOO-funksie : -

Kragdissipasie (maksimum) : 214W (Tc)

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : PG-TO262-3

Pakket / saak : TO-262-3 Long Leads, I²Pak, TO-262AA

gewig : -

toestand : Nuut en oorspronklik

dokumente vir IPI037N08N3GHKSA1

Inligtingsblaaie : IPI037N08N3GHKSA1.pdf

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