GP1M010A080N - MOSFET N-CH 900V 10A TO3PN

Vervaardiger Deel nommer

GP1M010A080N

Interne Deel nommer

ABC-GP1M010A080N

vervaardiger

Global Power Technologies Group

Kort beskrywing

MOSFET N-CH 900V 10A TO3PN

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

83808 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het GP1M010A080N in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir GP1M010A080N

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : GP1M010A080N

vervaardiger : Global Power Technologies Group

beskrywing : MOSFET N-CH 900V 10A TO3PN

reeks : -

Deelstatus : Obsolete

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 900V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 10A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 1.05 Ohm @ 5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 53nC @ 10V

Vgs (maksimum) : ±30V

Invoerkapasiteit (Ciss) (Max) @ Vds : 2336pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 312W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : TO-3PN

Pakket / saak : TO-3P-3, SC-65-3

gewig : -

toestand : Nuut en oorspronklik

dokumente vir GP1M010A080N

Inligtingsblaaie : GP1M010A080N.pdf

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