FDB86102LZ - MOSFET N-CH 100V 30A D2PAK

Vervaardiger Deel nommer

FDB86102LZ

Interne Deel nommer

ABC-FDB86102LZ

vervaardiger

ON Semiconductor

Kort beskrywing

MOSFET N-CH 100V 30A D2PAK

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

779373 Pieces

verwysingsprys

~~USD 0.41998~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het FDB86102LZ in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir FDB86102LZ

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : FDB86102LZ

vervaardiger : ON Semiconductor

beskrywing : MOSFET N-CH 100V 30A D2PAK

reeks : PowerTrench®

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 8.3A (Ta), 30A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 24 mOhm @ 8.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 21nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1275pF @ 50V

VOO-funksie : -

Kragdissipasie (maksimum) : 3.1W (Ta)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : TO-263AB

Pakket / saak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

gewig : -

toestand : Nuut en oorspronklik

dokumente vir FDB86102LZ

Inligtingsblaaie : FDB86102LZ.pdf

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