TK4A60DB(STA4,Q,M) - MOSFET N-CH 600V 3.7A TO-220SIS

Vervaardiger Deel nommer

TK4A60DB(STA4,Q,M)

Interne Deel nommer

ABC-TK4A60DB(STA4,Q,M)

vervaardiger

Toshiba Semiconductor and Storage

Kort beskrywing

MOSFET N-CH 600V 3.7A TO-220SIS

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

51072 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het TK4A60DB(STA4,Q,M) in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir TK4A60DB(STA4,Q,M)

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : TK4A60DB(STA4,Q,M)

vervaardiger : Toshiba Semiconductor and Storage

beskrywing : MOSFET N-CH 600V 3.7A TO-220SIS

reeks : π-MOSVII

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 600V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 3.7A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 2 Ohm @ 1.9A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 11nC @ 10V

Vgs (maksimum) : ±30V

Invoerkapasiteit (Ciss) (Max) @ Vds : 540pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 35W (Tc)

Werkstemperatuur : 150°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : TO-220SIS

Pakket / saak : TO-220-3 Full Pack

gewig : -

toestand : Nuut en oorspronklik

dokumente vir TK4A60DB(STA4,Q,M)

Inligtingsblaaie : TK4A60DB(STA4,Q,M).pdf

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