NCP81075DR2G - HIGH PERFORMANCE DUAL MOS

Vervaardiger Deel nommer

NCP81075DR2G

Interne Deel nommer

ABC-NCP81075DR2G

vervaardiger

ON Semiconductor

Kort beskrywing

HIGH PERFORMANCE DUAL MOS

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

691236 Pieces

verwysingsprys

~~USD 0.5265~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het NCP81075DR2G in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir NCP81075DR2G

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : NCP81075DR2G

vervaardiger : ON Semiconductor

beskrywing : HIGH PERFORMANCE DUAL MOS

reeks : -

Deelstatus : Active

Gedryf konfigurasie : High-Side or Low-Side

Kanaal tipe : Independent

Aantal drywers : 2

Hek Tipe : N-Channel MOSFET

Spanning - Toevoer : 8.5V ~ 20V

Logiese spanning - VIL, VIH : 0.8V, 2.7V

Stroom - piekuitset (bron, wasbak) : 4A, 4A

Invoertipe : Non-Inverting

Hoë syspanning - Max (Bootstrap) : 200V

Rise / Fall Time (tipe) : 8ns, 7ns

Werkstemperatuur : -40°C ~ 140°C (TJ)

Monteringstipe : Surface Mount

Pakket / saak : 8-SOIC (0.154", 3.90mm Width)

Verskaffer toestelpakket : 8-SOIC

gewig : -

toestand : Nuut en oorspronklik

dokumente vir NCP81075DR2G

Inligtingsblaaie : NCP81075DR2G.pdf

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