PHD22NQ20T,118 - MOSFET N-CH 200V 21.1A DPAK

Vervaardiger Deel nommer

PHD22NQ20T,118

Interne Deel nommer

ABC-PHD22NQ20T,118

vervaardiger

NXP USA Inc.

Kort beskrywing

MOSFET N-CH 200V 21.1A DPAK

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

44980 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het PHD22NQ20T,118 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir PHD22NQ20T,118

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : PHD22NQ20T,118

vervaardiger : NXP USA Inc.

beskrywing : MOSFET N-CH 200V 21.1A DPAK

reeks : TrenchMOS™

Deelstatus : Obsolete

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 200V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 21.1A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 120 mOhm @ 12A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 30.8nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1380pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 150W (Tc)

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : DPAK

Pakket / saak : TO-252-3, DPak (2 Leads + Tab), SC-63

gewig : -

toestand : Nuut en oorspronklik

dokumente vir PHD22NQ20T,118

Inligtingsblaaie : PHD22NQ20T,118.pdf

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