TK18E10K3,S1X(S - MOSFET N-CH 100V 18A TO-220AB

Vervaardiger Deel nommer

TK18E10K3,S1X(S

Interne Deel nommer

ABC-TK18E10K3,S1X(S

vervaardiger

Toshiba Semiconductor and Storage

Kort beskrywing

MOSFET N-CH 100V 18A TO-220AB

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

552720 Pieces

verwysingsprys

~~USD 0.5922~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het TK18E10K3,S1X(S in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir TK18E10K3,S1X(S

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : TK18E10K3,S1X(S

vervaardiger : Toshiba Semiconductor and Storage

beskrywing : MOSFET N-CH 100V 18A TO-220AB

reeks : U-MOSIV

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 18A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, vgs : 42 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : -

Heklading (Vg) (Maks) @ Vgs : 33nC @ 10V

Vgs (maksimum) : -

Invoerkapasiteit (Ciss) (Max) @ Vds : -

VOO-funksie : -

Kragdissipasie (maksimum) : -

Werkstemperatuur : 150°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : TO-220-3

Pakket / saak : TO-220-3

gewig : -

toestand : Nuut en oorspronklik

dokumente vir TK18E10K3,S1X(S

Inligtingsblaaie : TK18E10K3,S1X(S.pdf

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