SQJ912AEP-T1_GE3 - MOSFET 2N-CH 40V 30A PPAK SO-8

Vervaardiger Deel nommer

SQJ912AEP-T1_GE3

Interne Deel nommer

ABC-SQJ912AEP-T1_GE3

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET 2N-CH 40V 30A PPAK SO-8

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1069313 Pieces

verwysingsprys

~~USD 0.306105~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het SQJ912AEP-T1_GE3 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SQJ912AEP-T1_GE3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SQJ912AEP-T1_GE3

vervaardiger : Vishay Siliconix

beskrywing : MOSFET 2N-CH 40V 30A PPAK SO-8

reeks : Automotive, AEC-Q101, TrenchFET®

Deelstatus : Active

VOO-tipe : 2 N-Channel (Dual)

VOO-funksie : Standard

Dreineer na die bronspanning (Vdss) : 40V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 30A

Rds On (Max) @ Id, vgs : 9.3 mOhm @ 9.7A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 38nC @ 10V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1835pF @ 20V

Krag - Maks : 48W

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Surface Mount

Pakket / saak : PowerPAK® SO-8 Dual

Verskaffer toestelpakket : PowerPAK® SO-8 Dual

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SQJ912AEP-T1_GE3

Inligtingsblaaie : SQJ912AEP-T1_GE3.pdf

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