IRF200B211 - MOSFET N-CH 200V 12A TO-220AB

Vervaardiger Deel nommer

IRF200B211

Interne Deel nommer

ABC-IRF200B211

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET N-CH 200V 12A TO-220AB

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

564347 Pieces

verwysingsprys

~~USD 0.58~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het IRF200B211 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir IRF200B211

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : IRF200B211

vervaardiger : Infineon Technologies

beskrywing : MOSFET N-CH 200V 12A TO-220AB

reeks : HEXFET®, StrongIRFET™

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 200V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 12A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 170 mOhm @ 7.2A, 10V

Vgs (th) (Max) @ Id : 4.9V @ 50µA

Heklading (Vg) (Maks) @ Vgs : 23nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 790pF @ 50V

VOO-funksie : -

Kragdissipasie (maksimum) : 80W (Tc)

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : TO-220AB

Pakket / saak : TO-220-3

gewig : -

toestand : Nuut en oorspronklik

dokumente vir IRF200B211

Inligtingsblaaie : IRF200B211.pdf

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