FDP038AN06A0-F102 - MOSFET N-CH 60V 80A TO220-3

Vervaardiger Deel nommer

FDP038AN06A0-F102

Interne Deel nommer

ABC-FDP038AN06A0-F102

vervaardiger

ON Semiconductor

Kort beskrywing

MOSFET N-CH 60V 80A TO220-3

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

262549 Pieces

verwysingsprys

~~USD 1.246655~~

Ons prys

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ABC Semiconductor het FDP038AN06A0-F102 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir FDP038AN06A0-F102

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : FDP038AN06A0-F102

vervaardiger : ON Semiconductor

beskrywing : MOSFET N-CH 60V 80A TO220-3

reeks : -

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 60V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 80A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 3.8 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 124nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 6400pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 310W (Tc)

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : TO-220-3

Pakket / saak : TO-220-3

gewig : -

toestand : Nuut en oorspronklik

dokumente vir FDP038AN06A0-F102

Inligtingsblaaie : FDP038AN06A0-F102.pdf

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