SIS776DN-T1-GE3 - MOSFET N-CH 30V 35A 1212-8

Vervaardiger Deel nommer

SIS776DN-T1-GE3

Interne Deel nommer

ABC-SIS776DN-T1-GE3

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET N-CH 30V 35A 1212-8

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1416982 Pieces

verwysingsprys

~~USD 0.231~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het SIS776DN-T1-GE3 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SIS776DN-T1-GE3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SIS776DN-T1-GE3

vervaardiger : Vishay Siliconix

beskrywing : MOSFET N-CH 30V 35A 1212-8

reeks : SkyFET®, TrenchFET®

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 30V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 35A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 6.2 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 36nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1360pF @ 15V

VOO-funksie : Schottky Diode (Body)

Kragdissipasie (maksimum) : 3.8W (Ta), 52W (Tc)

Werkstemperatuur : -50°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : PowerPAK® 1212-8

Pakket / saak : PowerPAK® 1212-8

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SIS776DN-T1-GE3

Inligtingsblaaie : SIS776DN-T1-GE3.pdf

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