FDP8D5N10C - FET ENGR DEV-NOT REL

Vervaardiger Deel nommer

FDP8D5N10C

Interne Deel nommer

ABC-FDP8D5N10C

vervaardiger

ON Semiconductor

Kort beskrywing

FET ENGR DEV-NOT REL

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

279020 Pieces

verwysingsprys

~~USD 1.17307~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het FDP8D5N10C in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir FDP8D5N10C

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : FDP8D5N10C

vervaardiger : ON Semiconductor

beskrywing : FET ENGR DEV-NOT REL

reeks : PowerTrench®

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 76A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 8.5 mOhm @ 76A, 10V

Vgs (th) (Max) @ Id : 4V @ 130µA

Heklading (Vg) (Maks) @ Vgs : 34nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 2475pF @ 50V

VOO-funksie : -

Kragdissipasie (maksimum) : 2.4W (Ta), 107W (Tc)

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : TO-220-3

Pakket / saak : TO-220-3

gewig : -

toestand : Nuut en oorspronklik

dokumente vir FDP8D5N10C

Inligtingsblaaie : FDP8D5N10C.pdf

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