IRFH7110TRPBF - MOSFET N CH 100V 11A PQFN 5X6

Vervaardiger Deel nommer

IRFH7110TRPBF

Interne Deel nommer

ABC-IRFH7110TRPBF

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET N CH 100V 11A PQFN 5X6

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1009085 Pieces

verwysingsprys

~~USD 0.324375~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het IRFH7110TRPBF in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir IRFH7110TRPBF

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : IRFH7110TRPBF

vervaardiger : Infineon Technologies

beskrywing : MOSFET N CH 100V 11A PQFN 5X6

reeks : HEXFET®

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 11A (Ta), 58A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 13.5 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 4V @ 100µA

Heklading (Vg) (Maks) @ Vgs : 87nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 3240pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 3.6W (Ta), 104W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 8-PQFN (5x6)

Pakket / saak : 8-TQFN Exposed Pad

gewig : -

toestand : Nuut en oorspronklik

dokumente vir IRFH7110TRPBF

Inligtingsblaaie : IRFH7110TRPBF.pdf

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