IGT60R070D1ATMA1 - IC GAN FET 600V 60A 8HSOF

Vervaardiger Deel nommer

IGT60R070D1ATMA1

Interne Deel nommer

ABC-IGT60R070D1ATMA1

vervaardiger

Infineon Technologies

Kort beskrywing

IC GAN FET 600V 60A 8HSOF

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

75036 Pieces

verwysingsprys

~~USD 8.09949~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het IGT60R070D1ATMA1 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir IGT60R070D1ATMA1

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : IGT60R070D1ATMA1

vervaardiger : Infineon Technologies

beskrywing : IC GAN FET 600V 60A 8HSOF

reeks : CoolGaN™

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : GaNFET (Gallium Nitride)

Dreineer na die bronspanning (Vdss) : 600V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 31A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, vgs : -

Vgs (th) (Max) @ Id : 1.6V @ 2.6mA

Heklading (Vg) (Maks) @ Vgs : -

Vgs (maksimum) : -10V

Invoerkapasiteit (Ciss) (Max) @ Vds : 380pF @ 400V

VOO-funksie : -

Kragdissipasie (maksimum) : 125W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : PG-HSOF-8-3

Pakket / saak : 8-PowerSFN

gewig : -

toestand : Nuut en oorspronklik

dokumente vir IGT60R070D1ATMA1

Inligtingsblaaie : IGT60R070D1ATMA1.pdf

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