RS1E200GNTB - MOSFET N-CH 30V 20A 8-HSOP

Vervaardiger Deel nommer

RS1E200GNTB

Interne Deel nommer

ABC-RS1E200GNTB

vervaardiger

Rohm Semiconductor

Kort beskrywing

MOSFET N-CH 30V 20A 8-HSOP

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

2414342 Pieces

verwysingsprys

~~USD 0.135575~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het RS1E200GNTB in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir RS1E200GNTB

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : RS1E200GNTB

vervaardiger : Rohm Semiconductor

beskrywing : MOSFET N-CH 30V 20A 8-HSOP

reeks : -

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 30V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 20A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 4.6 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 16.8nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1080pF @ 15V

VOO-funksie : -

Kragdissipasie (maksimum) : 3W (Ta), 25.1W (Tc)

Werkstemperatuur : 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 8-HSOP

Pakket / saak : 8-PowerTDFN

gewig : -

toestand : Nuut en oorspronklik

dokumente vir RS1E200GNTB

Inligtingsblaaie : RS1E200GNTB.pdf

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