PHX18NQ11T,127 - MOSFET N-CH 110V 12.5A SOT186A

Vervaardiger Deel nommer

PHX18NQ11T,127

Interne Deel nommer

ABC-PHX18NQ11T,127

vervaardiger

NXP USA Inc.

Kort beskrywing

MOSFET N-CH 110V 12.5A SOT186A

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

71874 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het PHX18NQ11T,127 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir PHX18NQ11T,127

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : PHX18NQ11T,127

vervaardiger : NXP USA Inc.

beskrywing : MOSFET N-CH 110V 12.5A SOT186A

reeks : TrenchMOS™

Deelstatus : Obsolete

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 110V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 12.5A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 90 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 21nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 635pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 31.2W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : TO-220F

Pakket / saak : TO-220-3 Full Pack, Isolated Tab

gewig : -

toestand : Nuut en oorspronklik

dokumente vir PHX18NQ11T,127

Inligtingsblaaie : PHX18NQ11T,127.pdf

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