TK31J60W,S1VQ - MOSFET N CH 600V 30.8A TO-3PN

Vervaardiger Deel nommer

TK31J60W,S1VQ

Interne Deel nommer

ABC-TK31J60W,S1VQ

vervaardiger

Toshiba Semiconductor and Storage

Kort beskrywing

MOSFET N CH 600V 30.8A TO-3PN

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

88536 Pieces

verwysingsprys

~~USD 4.225~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het TK31J60W,S1VQ in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir TK31J60W,S1VQ

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : TK31J60W,S1VQ

vervaardiger : Toshiba Semiconductor and Storage

beskrywing : MOSFET N CH 600V 30.8A TO-3PN

reeks : DTMOSIV

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 600V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 30.8A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 88 mOhm @ 15.4A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 1.5mA

Heklading (Vg) (Maks) @ Vgs : 86nC @ 10V

Vgs (maksimum) : ±30V

Invoerkapasiteit (Ciss) (Max) @ Vds : 3000pF @ 300V

VOO-funksie : Super Junction

Kragdissipasie (maksimum) : 230W (Tc)

Werkstemperatuur : 150°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : TO-3P(N)

Pakket / saak : TO-3P-3, SC-65-3

gewig : -

toestand : Nuut en oorspronklik

dokumente vir TK31J60W,S1VQ

Inligtingsblaaie : TK31J60W,S1VQ.pdf

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