SI2319DDS-T1-GE3 - MOSFET P-CHAN 40V

Vervaardiger Deel nommer

SI2319DDS-T1-GE3

Interne Deel nommer

ABC-SI2319DDS-T1-GE3

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET P-CHAN 40V

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

3358208 Pieces

verwysingsprys

~~USD 0.09747~~

Ons prys

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ABC Semiconductor het SI2319DDS-T1-GE3 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SI2319DDS-T1-GE3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SI2319DDS-T1-GE3

vervaardiger : Vishay Siliconix

beskrywing : MOSFET P-CHAN 40V

reeks : TrenchFET® Gen III

Deelstatus : Active

VOO-tipe : P-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 40V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 2.7A (Ta), 3.6A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 75 mOhm @ 2.7A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 19nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 650pF @ 20V

VOO-funksie : -

Kragdissipasie (maksimum) : 1W (Ta), 1.7W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : SOT-23-3 (TO-236)

Pakket / saak : TO-236-3, SC-59, SOT-23-3

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SI2319DDS-T1-GE3

Inligtingsblaaie : SI2319DDS-T1-GE3.pdf

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