SIZ200DT-T1-GE3 - MOSFET N-CH DUAL 30V

Vervaardiger Deel nommer

SIZ200DT-T1-GE3

Interne Deel nommer

ABC-SIZ200DT-T1-GE3

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET N-CH DUAL 30V

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1344021 Pieces

verwysingsprys

~~USD 0.24354~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het SIZ200DT-T1-GE3 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SIZ200DT-T1-GE3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SIZ200DT-T1-GE3

vervaardiger : Vishay Siliconix

beskrywing : MOSFET N-CH DUAL 30V

reeks : TrenchFET® Gen IV

Deelstatus : Active

VOO-tipe : 2 N-Channel (Dual)

VOO-funksie : Standard

Dreineer na die bronspanning (Vdss) : 30V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)

Rds On (Max) @ Id, vgs : 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 28nC @ 10V, 30nC @ 10V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1510pF @ 15V, 1600pF @ 15V

Krag - Maks : 4.3W (Ta), 33W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Pakket / saak : 8-PowerWDFN

Verskaffer toestelpakket : 8-PowerPair® (3.3x3.3)

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SIZ200DT-T1-GE3

Inligtingsblaaie : SIZ200DT-T1-GE3.pdf

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