SI4900DY-T1-GE3 - MOSFET 2N-CH 60V 5.3A 8-SOIC

Vervaardiger Deel nommer

SI4900DY-T1-GE3

Interne Deel nommer

ABC-SI4900DY-T1-GE3

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET 2N-CH 60V 5.3A 8-SOIC

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1180816 Pieces

verwysingsprys

~~USD 0.2772~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het SI4900DY-T1-GE3 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SI4900DY-T1-GE3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SI4900DY-T1-GE3

vervaardiger : Vishay Siliconix

beskrywing : MOSFET 2N-CH 60V 5.3A 8-SOIC

reeks : TrenchFET®

Deelstatus : Active

VOO-tipe : 2 N-Channel (Dual)

VOO-funksie : Logic Level Gate

Dreineer na die bronspanning (Vdss) : 60V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 5.3A

Rds On (Max) @ Id, vgs : 58 mOhm @ 4.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 20nC @ 10V

Invoerkapasiteit (Ciss) (Max) @ Vds : 665pF @ 15V

Krag - Maks : 3.1W

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Pakket / saak : 8-SOIC (0.154", 3.90mm Width)

Verskaffer toestelpakket : 8-SO

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SI4900DY-T1-GE3

Inligtingsblaaie : SI4900DY-T1-GE3.pdf

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