SCTH90N65G2V-7 - SILICON CARBIDE POWER MOSFET 650

Vervaardiger Deel nommer

SCTH90N65G2V-7

Interne Deel nommer

ABC-SCTH90N65G2V-7

vervaardiger

STMicroelectronics

Kort beskrywing

SILICON CARBIDE POWER MOSFET 650

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

63456 Pieces

verwysingsprys

~~USD 23.5705~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het SCTH90N65G2V-7 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SCTH90N65G2V-7

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SCTH90N65G2V-7

vervaardiger : STMicroelectronics

beskrywing : SILICON CARBIDE POWER MOSFET 650

reeks : -

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : SiCFET (Silicon Carbide)

Dreineer na die bronspanning (Vdss) : 650V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 90A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, vgs : 26 mOhm @ 50A, 18V

Vgs (th) (Max) @ Id : 5V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 157nC @ 18V

Vgs (maksimum) : +22V, -10V

Invoerkapasiteit (Ciss) (Max) @ Vds : 3300pF @ 400V

VOO-funksie : -

Kragdissipasie (maksimum) : 330W (Tc)

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : H2PAK-7

Pakket / saak : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SCTH90N65G2V-7

Inligtingsblaaie : SCTH90N65G2V-7.pdf

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