TSM60N1R4CH C5G - MOSFET N-CH 600V 3.3A TO251

Vervaardiger Deel nommer

TSM60N1R4CH C5G

Interne Deel nommer

ABC-TSM60N1R4CH C5G

vervaardiger

Taiwan Semiconductor Corporation

Kort beskrywing

MOSFET N-CH 600V 3.3A TO251

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1422155 Pieces

verwysingsprys

~~USD 0.23016~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het TSM60N1R4CH C5G in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir TSM60N1R4CH C5G

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : TSM60N1R4CH C5G

vervaardiger : Taiwan Semiconductor Corporation

beskrywing : MOSFET N-CH 600V 3.3A TO251

reeks : -

Deelstatus : Not For New Designs

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 600V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 3.3A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 1.4 Ohm @ 2A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 7.7nC @ 10V

Vgs (maksimum) : ±30V

Invoerkapasiteit (Ciss) (Max) @ Vds : 370pF @ 100V

VOO-funksie : -

Kragdissipasie (maksimum) : 38W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : TO-251 (IPAK)

Pakket / saak : TO-251-3 Short Leads, IPak, TO-251AA

gewig : -

toestand : Nuut en oorspronklik

dokumente vir TSM60N1R4CH C5G

Inligtingsblaaie : TSM60N1R4CH C5G.pdf

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