RN2712JE(TE85L,F) - TRANS 2PNP PREBIAS 0.1W ESV

Vervaardiger Deel nommer

RN2712JE(TE85L,F)

Interne Deel nommer

ABC-RN2712JE(TE85L,F)

vervaardiger

Toshiba Semiconductor and Storage

Kort beskrywing

TRANS 2PNP PREBIAS 0.1W ESV

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

7422324 Pieces

verwysingsprys

~~USD 0.0441~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

ABC Semiconductor het RN2712JE(TE85L,F) in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir RN2712JE(TE85L,F)

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : RN2712JE(TE85L,F)

vervaardiger : Toshiba Semiconductor and Storage

beskrywing : TRANS 2PNP PREBIAS 0.1W ESV

reeks : -

Deelstatus : Active

Transistor tipe : 2 PNP - Pre-Biased (Dual) (Emitter Coupled)

Stroom - Versamelaar (IK) (Maks) : 100mA

Spanning - Verdeling van versamelaaruitstoot (maksimum) : 50V

Weerstand - basis (R1) : 22 kOhms

Weerstand - Emitterbasis (R2) : -

DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Stroom - Versneller van versamelaar (maksimum) : 100nA (ICBO)

Frekwensie - oorgang : 200MHz

Krag - Maks : 100mW

Monteringstipe : Surface Mount

Pakket / saak : SOT-553

Verskaffer toestelpakket : ESV

gewig : -

toestand : Nuut en oorspronklik

dokumente vir RN2712JE(TE85L,F)

Inligtingsblaaie : RN2712JE(TE85L,F).pdf

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